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APM2014NUC MOSFET N-Channel 20V 40A TO-252/D-PAK marking APM2014 high density battery design/lead free
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 40A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.014Ω/Ohm @10A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V |
| 耗散功率Pd Power Dissipation | 50W |
| Description & Applications | Features 20V/40A, RDS(ON)=12mW (typ.) @ VGS=4.5V RDS(ON)=18mW (typ.) @ VGS=2.5V • Super High Dense Cell Design • Reliable and Rugged • Lead Free Available (RoHS Compliant) |
| 描述与应用 | 20V/40A， RDS（ON）=12MW（典型值）@ VGS= 4.5V RDS（ON）=18mW功率（典型值@VGS=2.5V •超级高密度电池设计 •可靠耐用 •铅（符合RoHS） |
