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APM2306AC MOSFET N-Channel 30V 3.5A SOT-23/SC-59 marking 2306 high density battery design/high power and current handling capability
| 最大源漏极电压Vds Drain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 3.5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.065Ω/Ohm 3.5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.5V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | N-Channel Enhancement Mode MOSFET •Switching Regulators •Switching Converters 30V/3.5A RDS(ON)=70mΩ(typ.) @ VGS=5V RDS(ON)=42mΩ(typ.) @ VGS=10 Super High Dense Cell Design High Power and Current Handling Capability SOT-23 Package |
| 描述与应用 | N沟道增强型MOSFET •开关稳压器 •开关变换器 RDS（ON）=70mΩ的（典型值）@ VGS=5V RDS（ON）=42mΩ（典型值）@ VGS=10 超级高密度电池设计 高功率和电流处理能力 SOT-23封装 |
