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APM2054NUC-TRL MOSFET N-Channel 20V 5A SOT-89 marking APM2054N high density battery design/lead free

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Product description
最大源漏极电压Vds Drain-Source Voltage20V
最大栅源极电压Vgs(±) Gate-Source Voltage16V
最大漏极电流Id Drain Current5A
源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance0.040Ω/Ohm @5A,10V
开启电压Vgs(th) Gate-Source Threshold Voltage0.6-1.5V
耗散功率Pd Power Dissipation1.47W
Description & ApplicationsFeatures 20V/5A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)
描述与应用20V/40A, RDS(ON)=12MW(典型值)@ VGS= 4.5V RDS(ON)=18mW功率(典型值@VGS=2.5V •超级高密度电池设计 •可靠耐用 •铅(符合RoHS)
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