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APM2054NDC-TR MOSFET N-Channel 20V 5A SOT-89 marking APM2054 high density battery design/lead free
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 16V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.040Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.6-1.5V |
| 耗散功率Pd Power Dissipation | 1.47W |
| Description & Applications | Features 20V/5A RDS(ON)=35mΩ(typ.) @ VGS=10V RDS(ON)=45mΩ(typ.) @ VGS=4.5V RDS(ON)=110mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) |
| 描述与应用 | 20V/40A， RDS（ON）=12MW（典型值）@ VGS= 4.5V RDS（ON）=18mW功率（典型值@VGS=2.5V •超级高密度电池设计 •可靠耐用 •铅（符合RoHS） |
