Scavenging browsing Mobile
Hot Search： SSM3K35MFV SSM3J36MFV 2SK3376TT-B
APM2300AAC MOSFET N-Channel 20V 6A TO-252/D-PAK marking high density battery design/lead free
| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12 |
| 最大漏极电流Id Drain Current | 6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.040Ω/Ohm @5A,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | 20V/6A , RDS(ON)=25mΩ(typ.) @ VGS=10V RDS(ON)=32mΩ(typ.) @ VGS=4.5V RDS(ON)=40mΩ(typ.) @ VGS=2.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package |
| 描述与应用 | RDS（ON）=25mΩ的（典型值）@ VGS= 10V RDS（ON）=32MΩ（典型值）@ VGS= 4.5V RDS（ON）=40MΩ（典型值）@ VGS= 2.5V 超级高密度电池设计极 低RDS（ON） 可靠耐用 SOT-23封装 |
