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APM2312AC MOSFET N-Channel 16V 5A SOT-23/SC-59 marking high density battery designvery
| 最大源漏极电压Vds Drain-Source Voltage | 16V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | 5A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.045Ω/Ohm 5A,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3V |
| 耗散功率Pd Power Dissipation | 1.25W |
| Description & Applications | N-Channel Enhancement Mode MOSFET Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. 16V/5A , RDS(ON) =35mΩ(typ.) @ VGS=4.5V RDS(ON)=45mΩ(typ.) @ VGS=2.5V RDS(ON)=60mΩ(typ.) @ VGS=1.8V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOT-23 Package |
| 描述与应用 | N沟道增强型MOSFET 在笔记本电脑的电源管理， 便携式和电池供电设备系统。 16V/5A， RDS（ON） =35MΩ@ VGS= 4.5V（典型值） RDS（ON）=45mΩ（典型值）@ VGS= 2.5V RDS（ON）=60mΩ的（典型值）@ VGS=1.8V 超级高密度电池设计极 低RDS（ON） 可靠耐用 SOT-23封装 |
