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HAT1059C MOSFET P-Channel -12V -3A 0.071ohm SOT-163 marking 59 power switch low on-resistance
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -3A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.071Ω @-1.5A,-2.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.2--1V |
| 耗散功率Pd Power Dissipation | 650mW/0.65W |
| Description & Applications | Silicon P Channel Power MOS FET Power Switching Low on-resistance RDS(on) = 52 mΩ typ (at VGS= –4.5 V, ID= –1.5 A) RDS(on)= 71 mΩ typ (at VGS= –2.5 V, ID= –1.5 A) RDS(on) = 98 mΩ typ (at VGS = –1.8 V, ID= –1.5 A) Capable of 1.8 V gate drive Small Package: CMFPAK-6 |
| 描述与应用 | 硅P通道功率MOS FET 电源开关 低导通电阻 RDS（ON）=52MΩ典型值（VGS= -4.5 V，ID=-1.5“） RDS（ON）= 71MΩ典型值（VGS= -2.5 V，ID=-1.5“） RDS（ON）= 98MΩ典型值（VGS= -1.8 V，ID=-1.5“） 能够为1.8V栅极驱动 小包装：CMFPAK-6 |
