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HAT1089C MOSFET P-Channel -20V -2A 0.079ohm SOT-363 marking VK low drive current 2.5V drive
最大源漏极电压Vds Drain-Source Voltage | -20V |
最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
最大漏极电流Id Drain Current | -2A |
源漏极导通电阻Rds Drain-Source On-State Resistance | 0.079Ω @-1A,-4.5V |
开启电压Vgs(th) Gate-Source Threshold Voltage | -0.4--1.4V |
耗散功率Pd Power Dissipation | 850mW/0.85W |
Description & Applications | • Low on-resistance RDS(on) = 79 mΩ typ. (at VGS = –4.5 V) • Low drive current. • 2.5 V gate drive devices. • High density mounting |
描述与应用 | •低导通电阻 RDS(ON)=79MΩ(典型值)。 (VGS=-4.5 V) •低驱动电流。 •2.5 V门驱动装置。 •高密度安装 |