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HAT1063M MOSFET P-Channel SOT-163 marking 1063 high frequency bipolar transistors small package
最大源漏极电压Vds Drain-Source Voltage | |
最大栅源极电压Vgs(±) Gate-Source Voltage | |
最大漏极电流Id Drain Current | |
源漏极导通电阻Rds Drain-Source On-State Resistance | |
开启电压Vgs(th) Gate-Source Threshold Voltage | |
耗散功率Pd Power Dissipation | |
Description & Applications | hitachi high frequency bipolar transistors Excellent C/N characteristics small package excellent temperature |
描述与应用 | 日立高频双极晶体管 优秀的C/ N特性 小包装 优良的温度 |