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HAT1069C-EL-E MOSFET P-Channel -12V -4A 0.038ohm SOT-363 marking VY high-speed switch 1.8V drive
| 最大源漏极电压Vds Drain-Source Voltage | -12V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 8V |
| 最大漏极电流Id Drain Current | -4A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.038Ω @-1.5A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.3--1.2V |
| 耗散功率Pd Power Dissipation | 900mW/0.9W |
| Description & Applications | Features • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting |
| 描述与应用 | •低导通电阻 RDS（ON） =38MΩ典型值（VGS=-4.5 V） •高速开关 •能够为1.8V栅极驱动 •高密度安装 |
