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HAT1069C-EL-E MOSFET P-Channel -12V -4A 0.038ohm SOT-363 marking VY high-speed switch 1.8V drive

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Product description
最大源漏极电压Vds
Drain-Source Voltage		-12V
最大栅源极电压Vgs(±)
Gate-Source Voltage		8V
最大漏极电流Id
Drain Current		-4A
源漏极导通电阻Rds
Drain-Source On-State
Resistance		0.038Ω @-1.5A,-4.5V
开启电压Vgs（th）
Gate-Source Threshold Voltage		-0.3--1.2V
耗散功率Pd
Power Dissipation		900mW/0.9W
Description & ApplicationsFeatures • Low on-resistance RDS(on) = 38 mΩ typ (at VGS = –4.5 V) • High speed switching • Capable of 1.8 V gate drive • High density mounting
描述与应用•低导通电阻 RDS（ON） =38MΩ典型值（VGS=-4.5 V） •高速开关 •能够为1.8V栅极驱动 •高密度安装
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