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EMX1DXV6T1 NPN+NPN Complex Bipolar Transistor 60V 100mA 120~560 SOT-563 marking 3X9 switch and digital circuit application
|
V(BR) CBO Collector-Base Voltage |
60V |
|
V(BR) CEO Collector-Emitter Voltage |
50V |
| Collector Current(IC) | 100MA |
| Transtion Frequency(fT) | 180MHZ |
| DC Current Gain(hFE) | 120~560 |
|
VCE (sat) Collector-Emitter Saturation Voltage |
0.4V |
| Power Dissipation （Pd） | 0.5W |
| Description & Applications | Features • Dual NPN General Purpose Amplifier Transistor • Reduces Board Space • High hFE, 210−460 (Typical) • Low VCE(sat), < 0.5 V • These are Pb−Free Devices |
| Technical Documentation Download | Read Online |
