最大源漏极电压Vds
Drain-Source Voltage | 20V |
最大栅源极电压Vgs(±)
Gate-Source Voltage | 12V |
最大漏极电流Id
Drain Current | 800mA/0.8A |
源漏极导通电阻Rds
Drain-Source On-State Resistance | 143mΩ@ VGS = 4.0V, ID = 600mA |
开启电压Vgs（th）
Gate-Source Threshold Voltage | 0.4~1.0V |
耗散功率Pd
Power Dissipation | 500mW/0.5W |
| Description & Applications | TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type High-Speed Switching Applications • 1.8 V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 235 mΩ (max) (@VGS = 1.8 V) Ron = 178 mΩ (max) (@VGS = 2.5 V) Ron = 143 mΩ (max) (@VGS = 4.0 V) |
| 描述与应用 | 东芝场效应晶体管的硅N沟道MOS类型 高速开关应用 •1.8 V驱动器 •N沟道2合1 •低导通电阻：RON= 235MΩ（最大）（@ VGS= 1.8 V） RON=178MΩ（最大）（@ VGS=2.5 V） RON=143MΩ（最大）（@ VGS=4.0 V） |