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2SA1400 PNP transistors（BJT） -400V -500mA/-0.5A 30~200 -1000mV/-1V TO-252/DPAK marking A1400
| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流IC Collector Current(IC) | −500mA/-0.5A |
| 截止频率fT Transtion Frequency(fT) | |
| 直流电流增益hFE DC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat） Collector-Emitter SaturationVoltage | -1000mV/-1V |
| 耗散功率Pc PoWer Dissipation | 2W |
| Description & Applications | PNP silicon triple diffused transistor high voltage； high speed； complement to 2SC3588 |
| 描述与应用 | PNP硅三重扩散晶体管 高电压; 高速; 补充2SC3588 |
