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HAT1053M-EL MOSFET P-Channel -20V -5.5A 0.034ohm SOT-163 marking 1053 low on-resistance low drive current
| 最大源漏极电压Vds Drain-Source Voltage | -20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | -5.5A |
| 源漏极导通电阻Rds Drain-Source On-State Resistance | 0.034Ω @-3A,-4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | -0.4--1.4V |
| 耗散功率Pd Power Dissipation | 2W |
| Description & Applications | Features • Low on-resistance • Low drive current • High density mounting • 2.5 V gate drive device |
| 描述与应用 | •低导通电阻 •低驱动电流 •高密度安装 •2.5 V门驱动装置 |
